专利名称：Titanium silicon nitride deposition发明人：Martin A. Knapp,Guido Probst申请号：US12333161申请日：20081211公开号：US07833906B2公开日：20101116
专利附图：
摘要：Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapordeposition process. In some embodiments, the TiSiN films are formed in a batch reactorusing TiCl, NHand SiHas precursors. Substrates are provided in a deposition chamber ofthe batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by
flowing TiClinto the deposition chamber simultaneously with NH. The depositionchamber is subsequently flushed with NH. to prepare the TiN layer for silicon
incorporation. SiHis subsequently flowed into the deposition chamber. Silicon from theSiHis incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NHbeforethe silicon precursor has been found to facilitate efficient silicon incorporation into theTiN layers to form TiSiN.
申请人：Martin A. Knapp,Guido Probst
地址：Laufen DE,Bautzen DE
国籍：DE,DE
代理机构：Knobbe, Martens, Olson & Bear, LLP
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